Hi, Winston,

We are making devices with gold as the electrode. Si is the substrate and Ti
is the adhesion layer. I am wondering if we need a barrier layer according
to your message. What's the material for barrier layer if it is necessary?

Yahong


>From: Winston Chan 
>Reply-To: Winston Chan , mems-cc@ISI.EDU
>To: MEMS@ISI.EDU
>Subject: Re: Is gold CMOS compatible?
>Date: Sat, 26 Feb 2000 09:53:50 -0600
>
>Gold is a very fast diffuser in Si. Although I never tried it, I was
>told that gold will diffusion through the thickness of a wafer in a
>short time on a hotplate. Besides diffusing very quickly, gold is also a
>deep level in Si so it will drastically reduce the minority carrier
>lifetime.
>
>Winston
>
>Ramakrishna M V S wrote:
> >
> > Hi.
> >
> > I would like to know if Gold is CMOS compatible (actually i heard that
>it is
> > not and am looking for reasons). If it indeed is not CMOS compatible
>then
> > why do many use gold as a reflective coating in micromachined optical
> > switches?
> >
> > Similarly, i would like to know how serious it is to use NaOH and KOH in
> > CMOS clean rooms.
> >
> > Please e-mail me at rk@geektown.net
> >
> > Regards
> > Rama
> >
>
>--
>Winston Chan                           | phone: (319) 353-2398
>Dept. of Electrical Engineering        | fax: (319) 353-1115
>University of Iowa                     | email: winston-chan@uiowa.edu
>Iowa City, IA 52242
>

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