Hi
I am a graduate student at the Mississippi State University, working on my
masters in computer engineering with specialization in fabrication. As
part of my research, I am presently working on a process to remove the
oxide from the back of a wafer using BOE. In order to preserve the front
of the wafer we are treating it with HMDS and resist (either AZ1518 or
SC1827), softbake it at 100C for 45 sec and hardbake at 200C for 2
min. However during the BOE process after a couple of min the resist is
starting to flake off causing us to remove the wafer from the BOE bath. As
a result we have not been able to remove the oxide from back of the wafer.
We think that we may not be applying HMDS correctly. Do we need a bake
after HMDS application? It would really help us if you could give us
some details on the right process.

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                                Mr. Ritwik Mishra
                Department of Electrical & Computer Engineering
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 Research Assistant
 Affiliations:
 Mississippi Center for Advanced Semiconductor Prototyping (MCASP)
 Emerging Material Research Laboratory (EMRL)
 P. O. Box 4668
 Mississippi State, MS 39762-4668
 PHONES (662): MCASP 325-2059, 325-8564    FAX: 662-325-2298
               EMRL  325-9476/7
               HOME  320-9393
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