I want to deposit Silicon Nitride layer on Si
substrate which has been already covered with Silicon
Oxide layer in some part. After that, I will do
plasma-etching the Nitride in some part for the next
wet etching step of Si Oxide and Si substrate.

The equipment for me to use for deposition and etching
is Plasma Therm PECVD. For etching, I will use
photoresist as a mask.

For those processes, I have some questions as follows.

1. Is RCA Cleanning needed before nitride depostion?

2. Which gases, what temperature(power) and pressure
are needed for Nitride PECVD? In that condition, what
is the depostion rate?

3. Which thickness of Nitride layer is enough as a
mask for Si Oxide and Si substrate etching?

4. Is the potoresist OK as a mask for plasma etching
of Nitirde?

5. Which gases, what temperature(power) and pressure
are needed for Nitride Plasma etching? In that
condition, what is the etching rate?

I have referred to many references, but I have no
experience of Nitride deposition and etching. So, I
hope to some advices from you all.

Thank you.



=====
Chang-Hwan Choi
Brown University, Box D
Division of Engineering, 182 Hope Street
Providence, RI 02912, U.S.A.

Tel: (401)867-6017(H), (401)863-2656(O), Fax: (401)863-9028
Email: chchoi@rocketmail.com, Chang-Hwan_Choi@Brown.edu

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