r.
Hi Jongbaeg,
first of all, the dose is wrong as well as the fact that you implanted boron
only. Piezoresistors on cantilevers should be very shallow (assuming that
you levers ihas thickness below 5 um) so you should implant BF2 instead and
you will need finally B concentration at about 10^19 cm^3, which your dose
does not provide. Annealing is pretty much the same for shallow junctions,
i.e. no drive-in, just impurities activation.
Cheers
Pavel

> ----------
> From:         Jongbaeg Kim[SMTP:jbkim@newton.berkeley.edu]
> Reply To:     Jongbaeg Kim
> Sent:         Sunday, March 04, 2001 12:56 PM
> To:   MEMS@ISI.EDU
> Subject:      Iimpurities annealing for maximum sensitivity of
> piezoresistor.
>
> Hello, everyone. I am working on the micro sensor development.
> Does anybody know the recipe on annealing the piezoresistor?
> I did boron ion implantation on my single crystal silicon to make =
> piezoresistive sensors(cantilever beam) with 30keV energy and 10^14/cm2 =
> dose.
> Now I need to do annealing to activate these impurities.
> What kind of temperature and annealing time gives maximum sensitivity?( =
> I meam delta R(resistance) )
> If you recommand any reference on this or give me any advice, it will be =
> greatly helpful and appreciated.
>
> Thank you very much.
>
> Good luck on our search.
>
> Jongbaeg Kim
>