durusmail: mems-talk: Controlling sidewall angle to make deep via hole in silicon using
Controlling sidewall angle to make deep via hole in silicon using
Controlling sidewall angle to make deep via hole in silicon using
cheol-hyun_han@agilent.com
2001-03-08
              dry etching
Hi, all;
I need to make deep via hole (more than 150um deep with about 150um
diameter) in silicon wafer regarding WL-CSP (wafer level-chip scale
packaging). I would like to use deep silicon dry etching for this, and I
need to have "sloped" sidewall for metal deposition. But most of deep
silicon etchers are talking about high aspect ratio with about 90-degree
sidewall angle and don't have information about if there is any way to
control the sidewall angle to get sloped.
It will be very appreciated if someone send me any information regarding
above including any angle recommendation that I need to make for my
scheme(150um deep, 150um contact pad)

Cheol
Agilent Technologies
Phone: 510-505-5461
Fax: 510-505-5560
Email: cheol-hyun_han@agilent.com


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