Hi everyone,

I am fabricating a device with doped a-Si film and polyimide as the
structural and sacrificial layer, respectively, on Si substrate with
integrated circuit. I have several questions about the fabrication.

1. How to realize the low temperature crystallization (<350^oC) of a-Si to
poly-Si.

2. It seems that polyimide sacrificial layer cannot be removed completely by
oxygen plasma ashing. How to remove the polyimide residue? The conventional
HF or H2SO4 based solution is not a good choice since it will attack metal
or dielectric insulating layer. An organic solution or a optimum dry etching
technique seems to be better. But I have no idea about it.

Any suggestion is appreciated.

Yours,
Andrew
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