Dear members,

I have been working on gold interconnects for low temperature applications.
However, at >600deg.C, the gold wire begins to diffuse into the top platinum
layer.

The major effect of this is to reduce time of failure in terms of device
performance.

Does anyone have a suggestion as to what binary metallization(top metal + wire
interconnect) scheme could be implemented without any evident interfacial
disturbance at 600deg.C.

Your response to this and any relating information will be appreciated.

Thank you.

Robert S. Okojie (Ph.D)
Kulite Semiconductor Products, Inc.
1 Willow Tree Road
Leonia, NJ 07605
(201)461-0900
e-mail rso6948@hertz.njit.edu