Dear colleagues,

I will like some information regarding the thermal expansion of
coefficient. I found some data which indicated Si has a CTE ranging from
2.6E-06 to 4.1E-06 W/mK.

What causes this range of CTE variation? I suspected 2 causes:

a) these CTE values were measured at different temperatures
c) these CTE values are dopant dependent (???)

Please kindly advise. In addition, if any vendors can supply me with
silicon substrates (2", 4", 6") with CTE of 4.1, please kindly drop me
another email.

Rgds,
Randall Cha
DL Pte Ltd, Singapore
Tel: 65-415 4447
Fax: 65-415 4444