Dear all,

I would like to ask you if there's also a software to figure out the doped area
profile after the activation process (oxidation/diffusion) of the implant, in
particular of Boron ions in silicon, in function of
the various parameters of the ion activation process (temperature, time) and in
function of the implantation parameters (dose, energy).

Thank you and regards,

Lucia Beccai
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Lucia Beccai
MITECH LAB-Scuola Superiore S. Anna
via Carducci 40
56127 PISA Italy
phone: +39 050 883419
fax: +39 050 883402
mailto: l.beccai@mail-arts.sssup.it
http://www-mitech.sssup.it/