Hi Henry:
We are using 6 um AZ 33XT and do not give it a bake
after development, since we do not want the resist to
flow. We need a vertical profile. After a DRIE SiO2
etch of only about 2 min, the resist seems visually
burned and under the microscope, it seems to be
flaking off. I wonder if the Vacuum and the power of
the DRIE are driving out remaining solvent too fast.
What can we do about it?

Thanks as alway6s for your great help.

Thomas

--- Henry Yang  schrieb: > Hi
Thomas,
>
> I used STR 1045 from Shipley that stood up to some
> DRIE Silicon etch. I
> suspect that you should be able to do the same. It
> is about 5um thick. STR
> 1075 is about 7um. If you can do a long
> softbake/hardbake you should be
> able to get the resist to stand up for that long. I
> don't have any
> experience with Oxide DRIE so I don't know if the
> difference in adhesion is
> going to cause problem.
>
> Good luck and happy holiday season!
>
> Henry Yang
>
> Jon Doe @memsnet.org on 12/21/2001
> 04:14:07 PM
>
> Please respond to mems-talk@memsnet.org
>
> Sent by:  mems-talk-admin@memsnet.org
>
>
> To:   mems-talk@memsnet.org
> cc:
> Subject:  [mems-talk] Thick positiv resist
>
>
>
>  Hi all:
> Does anybody out there have experience with a thick
> positive resist, which holds up to 20 um deep RIE
> oxide etches?
> Thanks for sharing your experience with us.
> Happy Holidays.
> Thomas
>
>
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