Hi,

Maybe you can read a book: Silicon Micromachining, by Elwenspoke.
There are details in KOH etching in this book. You can try etchants
with various concentrations of KOH, and agitated the etchant during
etching. (You can use ultrasonic agitation).


Wang, Zheyao
------------------------------------------
Institute of Microelectronics
Tsinghua University
Beijing, 100084 China
Office: Room 3-309
Phone: +86-10-62789147/51 ext. 309
E-mail: wangzy@dns.ime.tsinghua.edu.cn
        saab9x@yahoo.com


----- Original Message -----
From: Onnop Srivannavit 
To: 
Sent: Monday, December 31, 2001 1:32 PM
Subject: [mems-talk] etch Si(110) and Si(100) in KOH


> Hi All
>
> I etched Si(110) and Si(100) wafers in KOH using SiO2
> as mask. I found that Si (110) surface after etch is
> much rougher than Si(100) surface. I wonder if anyone
> has experience about this. Does anyone know reasons
> behind that?
>
> Thanks in advance.
>
> Onnop
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