I've heard of someone using a freeze drying technique to avoid stiction.

Reni Fliron

-----Original Message-----
From: Paolo Bondavalli [mailto:paolo.bondavalli@thalesgroup.com]
Sent: 11. januar 2002 16:55
To: mems-talk@memsnet.org
Subject: [mems-talk] Wet etching


Dear MEMS experts,
We are looking to make wet-ecthing of a SiO2 sacrificial layer under a
freestanding layer.
The problem is stiction.
I know that we have to use SCO2 in order to improve the reproductibility
of the process but what can we do in order to obtain any layers without
sticting only using usual techniques?
After etching, we wash the sample in water and  in propanol solution.
Our wafer is in Silicon.
Thanks for information


*********************************************************
Dr. Paolo Bondavalli
R&D Engineer
LABCOM - Laboratoire Interconnexions Optiques et MEMS
THALES (ex THOMSON-CSF) CORPORATE RESEARCH CENTER
Domaine de Corbeville,
Route Departementale 128
F91404 ORSAY
(FRANCE)
Tel : 01 69 33 08 63
Fax : 01 69 33 08 62
Email : Paolo.Bondavalli@thalesgroup.com
**********************************************************
Disclaimer: Opinions expressed herein are my own and may
  not represent those of my employer.
**********************************************************
_______________________________________________
mems-talk@memsnet.org mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.mems-exchange.org/