This may sound simple ("is it plugged in?"), but I've heard that thorough
cleaning is VERY important in reducing stiction. So, longer rinses may
help your performance.

Jesse Fowler
  UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV
  Los Angeles, CA 90095-1597 | (310)825-3977
"Rule #6: There is no rule #6" -- Monty Python
"ARTICLE SIX:  THIS ARTICLE IS ABOLISHED" -- Constitution of Afghanistan

On Fri, 11 Jan 2002, Paolo Bondavalli wrote:

> Dear MEMS experts,
> We are looking to make wet-ecthing of a SiO2 sacrificial layer under a
> freestanding layer.
> The problem is stiction.
> I know that we have to use SCO2 in order to improve the reproductibility
> of the process but what can we do in order to obtain any layers without
> sticting only using usual techniques?
> After etching, we wash the sample in water and  in propanol solution.
> Our wafer is in Silicon.
> Thanks for information
>
>
> *********************************************************
> Dr. Paolo Bondavalli
> R&D Engineer
> LABCOM - Laboratoire Interconnexions Optiques et MEMS
> THALES (ex THOMSON-CSF) CORPORATE RESEARCH CENTER
> Domaine de Corbeville,
> Route Departementale 128
> F91404 ORSAY
> (FRANCE)
> Tel : 01 69 33 08 63
> Fax : 01 69 33 08 62
> Email : Paolo.Bondavalli@thalesgroup.com
> **********************************************************
> Disclaimer: Opinions expressed herein are my own and may
>   not represent those of my employer.
> **********************************************************
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