durusmail: mems-talk: a 45-degree inclined surface
a 45-degree inclined surface
2002-01-14
2002-01-14
2002-01-16
2002-01-15
a 45-degree inclined surface
Okulan, Nihat
2002-01-15
Baecklund and Rosengren published papers (J.Mems, 1992 and 1995) which
describe the fabrication of V-grooves and free-standing studs with 45 degree
angles to the Si surface ((100) wafer) using KOH and EDP.

-Nihat



-----Original Message-----
From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
Behalf Of David Nemeth
Sent: Monday, January 14, 2002 8:24 AM
To: mems-talk@memsnet.org
Subject: RE: [mems-talk] a 45-degree inclined surface


One trick I saw in the literature was to add a surfactant to the TMAH
etch(the paper mentioned using something called NCW-601A nonionic surfactant
from the Wake Pure chemical company.  They used 22% TMAH solution with 1%
weight surfactant.)  This has the effect of greatly reducing the etch rate
of the <110> plane in silicon, so a pattern with straight edges patterned
parrallel to the <010> plane (45 degrees off of the normal wafer flat) would
reveal the <110> plane, which is at 45 degrees.

I don't remember the name of the journal, but the authorwas Masayuki
Sekimura at Toshiba Corp (email masayuki.sekimura@toshiba.co.jp).  The paper
identification on the bottom is 0-7803-5194-0/99 page 650.

Hope this helps.  I would imagine other surfactants would have a similar
effect.

David Nemeth
Senior Process Engineer
Sophia Wireless, Inc.
14225-C Sullyfield Circle
Chantilly, VA
Ph: (703) 961-9573 x206
Fax:(703) 961-9576

-----Original Message-----
From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
Behalf Of ahmed osman
Sent: Monday, January 14, 2002 6:57 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] a 45-degree inclined surface


Hi all,

Is there a micromachining technique that can achieve a surface 45
degree-inclined with respect to the wafer surface? I'm not restricted to a
specific material nor to a specific technology,but the 45-degrees should be
achieved with high accuracy and thus i first considered wet etching in
silicon but i failed to get the required angle by any of the known tricks.

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