Hello Avi
Do you have more details regarding your process?
agitation
Undercut profile/aspect ratio
etch rate
etc.,

We use a bubble etch process (bleeding N2 through 6-1-1 HNA)
for 250u silicon SC180 &SC450 resist., but I'm always interested in other's
technique:success.
Liz

> From: Avi.Laker@teccor.com
> Reply-To: mems-talk@memsnet.org
> Date: Thu, 14 Feb 2002 11:37:39 -0600
> To: mems-talk@memsnet.org
> Subject: [mems-talk] ISOTROPIC Silicon etching
>
> We routinely etch 50 to 75u silicon in production using a 2:1:1
> (Nitric,HF, Acetic) etch at
> 6'C with SC450 resist as the mask with or without underlying oxide. The
> resist is a negative
> tone resist made by Arch.
> The resist etch rate is 0.
>
> Contact me if you need further details.
>
> avi
>
> Avi Laker
> Teccor Electronics
> 972 756 8237   Office
> 214 439 6770   Pager
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