Hi, Liz.

Would explain how the bubble etch process is different to the conventional
wet etching process?

Thanks in advance.

----- Original Message -----
From: "Liz Shelley" 
To: 
Sent: Friday, February 15, 2002 8:09 AM
Subject: Re: [mems-talk] ISOTROPIC Silicon etching


> Hello Avi
> Do you have more details regarding your process?
> agitation
> Undercut profile/aspect ratio
> etch rate
> etc.,
>
> We use a bubble etch process (bleeding N2 through 6-1-1 HNA)
> for 250u silicon SC180 &SC450 resist., but I'm always interested in
other's
> technique:success.
> Liz
>
> > From: Avi.Laker@teccor.com
> > Reply-To: mems-talk@memsnet.org
> > Date: Thu, 14 Feb 2002 11:37:39 -0600
> > To: mems-talk@memsnet.org
> > Subject: [mems-talk] ISOTROPIC Silicon etching
> >
> > We routinely etch 50 to 75u silicon in production using a 2:1:1
> > (Nitric,HF, Acetic) etch at
> > 6'C with SC450 resist as the mask with or without underlying oxide. The
> > resist is a negative
> > tone resist made by Arch.
> > The resist etch rate is 0.
> >
> > Contact me if you need further details.
> >
> > avi
> >
> > Avi Laker
> > Teccor Electronics
> > 972 756 8237   Office
> > 214 439 6770   Pager
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