Hi,
does anybody has expierence about process parametes (O2/CHF3) to etch with
RIE in SiO2 to get a 45 degree profile. The process should tend to isotrop
etching.
Other question is to find a Resist which is wear-resistant in RIE to etch in
SiO2 405m deep ?
I hope that somebody have a idee ?




> ************************************************
> Martin Priester
> Alcatel SEL AG, Dept. ZFZ/O
> Lorenzstr. 10, D-70435 Stuttgart
> Phone +49-(0)711-821.44458
> Fax.  +49-(0)711-821.46355
> e-mail        mailto:Martin.Priester@alcatel.de
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