Hi Bob
I'm working with a STS deep Si etcher and I'm using AZ4562
up to 10 microns thick (about 1700rpm, 4000rpm about 5.3microns).
This works well if the structures are not to small.
I also use SP 1813 but thickness is limited
to abour 2.5 microns (1700 rpm about 2.4 microns).
Greetings
Stefan

_____________________________________________________
Dr. Stefan Blunier
ETH Zentrum, CLA G 21.2
Institut fuer Mechanische Systeme
Tannenstrasse 3
CH - 8092 Zuerich
Switzerland

Tel:   +41 1 632 77 64
Fax:  +41 1 632 11 45
e-mail: blunier@imes.mavt.ethz.ch
__________________________________________________


-----Original Message-----
From: BobHendu@aol.com [mailto:BobHendu@aol.com]
Sent: Montag, 18. Februar 2002 18:36
To: mems-talk@memsnet.org
Cc: xanh@processintegrationll.com
Subject: [mems-talk] Positive resists for MEMS processing


We have recently begun processing wafers using a new plasma system for
doing
deep silicon etch. Since our goal is 100 microns of vertical etch
profile in
silicon we are interested in what types of positive photoresists MEMS
people
are using. Our initial results with standard positive resist at
thicknesses
of around 1.2 microns have not yielded very consistant results. Work
that we
have done with SU-8 resist have been very good with respect to profile
and
depth of etch using a formulation of around 5 microns thickness. This
also
allows us to ash off the SU-8 after etch with little problem. My
question is
what type of resists are acceptable within the MEMS community that will
yield
at least a 4-5 micron thickness with vertical profiles using stepper or
other
alignment tools. Bob Henderson
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