Dear All!

I wanted to wet etch silica glass doped with GeO2 using 4:1 buffered HF. I
was wondering if anybody could tell me the differential etch rate (if any)
between GeO2 and SiO2 in HF.

Thank you very much again for your help!!

Best regards,

Sonia.

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Sonia Garcia-Blanco

Department of Electronics and Electrical Engineering
University of Glasgow
Oakfield Ave.
G12 8LT
Glasgow

Phone:
   Office: (0141) 339 8855 ext 0101
   Lab:    (0141) 330 6014
Email: sgblanco@elec.gla.ac.uk

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