Hi all,
 i have been using a oxide etchant to release a SiNx structure by etching
away a doped oxide, but the
lateral etch rate is quite slow. i have not used any agitation for the
fear of sagging the microstructure. The SiNx also is getting etched in the
mean time(around 30 min).
could somebody please suggest something to over come the problem.
thanks
regds
Ravi Shankar
Semiconductor Complex Ltd,
India