hello samrat, you can use positive 1818 resist which will hold up during your tantalum etching. tantalum is a relatively easy material to sputter, but 1 micron may take you a significant time. We use DC magnetron sputtering using 0.7 KW power (guess shuld be good for your temperature condition) and 14mTorr of Ar gas (no bias), and it gives us a pretty uniform low stress Ta film. Just curious, what is the intended purpose of your Ta film? Regards, Adnan Merhaba --- Samrat Mukherjeewrote: > Hi , > Could any one give me some information about > Tantulum. I would like to know the following. > > 1: How do you pattern Tantalum? I know that you can > use HF:HNO3=1:1 to etch Ta, but what can you use to > protect the region that you donot want to etch. > > 2: What are the sputtering conditions in which you > can > get very low stress Ta-film that is 1 micron thick. > The Ta is being sputtered on Palladium. Also, I > cannot heat the substrate above 600 degree C. > > Thanks, > > Samrat > Yahoo! Movies - coverage of the 74th Academy Awards. > http://movies.yahoo.com/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe > or change your list > options, visit > http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS > processing services. > Visit us at http://www.mems-exchange.org/ Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/