Hi all,

I have a question and hope if someone here can help.

In my process, I normally do an anodic bonding step
near the end to finish off the device - top wafer is
silicon and bottom wafer is glass/Pyrex.  I want to
change the process a bit by replacing the bottom wafer
with a Silicon wafer.  To accomplish this glueing of
the two wafers, I want to perform some kind of Au
solder bonding or Au/Si eutetic bonding on the full
wafer scale.  I wonder if anyone out there doing this
consistently enough to provide some advice.
For Au solder bonding (Au/Sn, for example), or Au/Si
bonding:
how thick of the layers do I need?  barrier layer? In
the EV bonder (or other typical bonder) how much
weight need to apply and at what temperature, and for
how long? How do you go about in preparing your wafers
to get the maximum and consistent bond? Etc...

Thank you,
MD
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