Hello MD,

Gold thermocompression bonding is a popluar technique. Temperature is
typically in the range of 300-400 deg C for 10-20 minutes. "Fabrication
Process and Plasticity of Gold-Gold Thermocompression Bonds" by Tsau,
Schmidt, and Spearing of MIT from the Sixth International Symposium on
Semiconductor Wafer Bonding: Science, Technology and Applications, ECS
Proc., 2001 is a good reference. They also used EVG bonder, so these
parameters should help you.

Best Regards,
Josh Palensky
EV Group
(602) 437-9492

-----Original Message-----
From: Dinh Ton [mailto:minhdinh2@yahoo.com]
Sent: Thursday, April 04, 2002 1:49 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Au solder bonding or Au/Si eutectic bonding


Hi all,

I have a question and hope if someone here can help.

In my process, I normally do an anodic bonding step
near the end to finish off the device - top wafer is
silicon and bottom wafer is glass/Pyrex.  I want to
change the process a bit by replacing the bottom wafer
with a Silicon wafer.  To accomplish this glueing of
the two wafers, I want to perform some kind of Au
solder bonding or Au/Si eutetic bonding on the full
wafer scale.  I wonder if anyone out there doing this
consistently enough to provide some advice.
For Au solder bonding (Au/Sn, for example), or Au/Si
bonding:
how thick of the layers do I need?  barrier layer? In
the EV bonder (or other typical bonder) how much
weight need to apply and at what temperature, and for
how long? How do you go about in preparing your wafers
to get the maximum and consistent bond? Etc...

Thank you,
MD
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