We've had good luck using TMAH with a masking layer of 1.5 microns of wet
thermal oxide.

David Nemeth
Senior Process Engineer
Sophia Wireless, Inc.
14225-C Sullyfield Circle
Chantilly, VA
Ph: (703) 961-9573 x206
Fax:(703) 961-9576

-----Original Message-----
From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
Behalf Of Ashutosh Shastry
Sent: Friday, April 12, 2002 10:57 AM
To: mems-talk@memsnet.org
Subject: Re: [mems-talk] Wet Etching


Thats right.

And to speed up etching that is to further icrease the <100>/SiO2 etch
rate ratio, add pyrazine to the EDP.  Receipies are available.

Good luck,

-Ashutosh-

On Fri, 12 Apr 2002, Amit Shiwalkar wrote:

Hello,

500 um is a hugh depth, I dont know what is your feature size. SiO2 will
not withstand KOH and there are problems even with TMAH. My suggestion is
that you use Ethylene Diamine + Pyrocatechol mixture, where SiO2 will serve
as an effective etch mask.

Regards
Amit Shiwalkar

aslam muhammad wrote:

> Hi Friends
>
>               I want to use TMAH and KOH as etchant to
> etch bulk silicon ( 500 micron).  which one is more
> suitable.  my etch mask is SiO2.  what is the recipe
> of a good etching rate KOH and TMAH please.
>
> Thankx
>
> M. Aslam




"Your reality is a figment of my Imagination"
      ......... To me you exist because I imagine that you do.
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============================================================================
====
        Ashutosh Shastry                Research Associate,
        Graduate Student,               Microelectronics Group,
        School of  Biosciences and      Electrical Engineering Dept.,
        Bioengineering,
        Phone: 091-22-5721791           I.I.T. Bombay, INDIA 400 076.
        Email: shastrys@vsnl.com        Phone:091-22-5723655
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===
        O Traveller, there is no such thing as PATH...
                                        .....paths are MADE by walking.
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