Hi Aslam,
This is regarding the use of KOH / TMAH for wet etching of bulk Si.
TMAH:-
- smooth surface finish
-non toxic and can be handled easily
- excellent selectivity to SiO2 and Si3N4
at 90 C & 22% wt TMAH
Si <100> etch rate = 1.0um/min
Si <110> etch rate = 1.4 um/min
which is higher than those observed with EDP, AHW, Hydrazine water, tetraethyl
ammonium hydroxide
but slower than those observed for KOH.
Anisotropy Ratio (100) / (111) is between 12.5 and 50
KOH:-
Selectivity of etching with Si and Sio2 is not very good, Si3N4 is not attacked
though.
SiO2 etch rate = 28A/min
extremely toxic, can cause blindness
At 80C etch rate may reduce to 0.7um/min
You may want to try KOH etch at 84 C, with stirring and addition of IPA.
Good luck
Anupama
On Fri, 12 Apr 2002 16:45:06, mems-talk-request@memsnet.org wrote:
> Send mems-talk mailing list submissions to
> mems-talk@memsnet.org
>
> To subscribe or unsubscribe via the World Wide Web, visit
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> than "Re: Contents of mems-talk digest..."
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>
> Today's Topics:
>
> 1. Re: Wet Etching (Ashutosh Shastry)
> 2. Re: Capacitive pressure sensor (Mike Mattes)
> 3. RE: I Need SOI (Rick Williston)
> 4. Re: Critical point drying. (Henry Yang)
> 5. Bonding PC membranes to glass (Troy Plattner)
> 6. RE: Capacitive pressure sensor (kirt_williams@agilent.com)
> 7. RE: looking for vendors (Maurice Norcott)
> 8. RE: vacuum oven (Maurice Norcott)
> 9. metal properties (anshu mehta)
> 10. Re: Critical point drying. (Sang Park)
> 11. RE: Wet Etching (David Nemeth)
> 12. Commercial DRIE services w/ SOI anti-footing option. (Jennifer Scalf)
> 13. Re: Photoresist coated glass source (Martin O. Patton)
>
> --__--__--
>
> Message: 1
> Date: Fri, 12 Apr 2002 20:28:30 +0530
> Date: Fri, 12 Apr 2002 20:26:58 +0530 (IST)
> From: Ashutosh Shastry
> To: mems-talk@memsnet.org
> Subject: Re: [mems-talk] Wet Etching
> Reply-To: mems-talk@memsnet.org
>
> Thats right.
>
> And to speed up etching that is to further icrease the <100>/SiO2 etch
> rate ratio, add pyrazine to the EDP. Receipies are available.
>
> Good luck,
>
> -Ashutosh-
>
> On Fri, 12 Apr 2002, Amit Shiwalkar wrote:
>
> Hello,
>
> 500 um is a hugh depth, I dont know what is your feature size. SiO2 will
> not withstand KOH and there are problems even with TMAH. My suggestion is
> that you use Ethylene Diamine + Pyrocatechol mixture, where SiO2 will serve
> as an effective etch mask.
>
> Regards
> Amit Shiwalkar
>
> aslam muhammad wrote:
>
> > Hi Friends
> >
> > I want to use TMAH and KOH as etchant to
> > etch bulk silicon ( 500 micron). which one is more
> > suitable. my etch mask is SiO2. what is the recipe
> > of a good etching rate KOH and TMAH please.
> >
> > Thankx
> >
> > M. Aslam
>
>
>
>
> "Your reality is a figment of my Imagination"
> ......... To me you exist because I imagine that you do.
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
>
================================================================================
> Ashutosh Shastry Research Associate,
> Graduate Student, Microelectronics Group,
> School of Biosciences and Electrical Engineering Dept.,
> Bioengineering,
> Phone: 091-22-5721791 I.I.T. Bombay, INDIA 400 076.
> Email: shastrys@vsnl.com Phone:091-22-5723655
>
===============================================================================
> O Traveller, there is no such thing as PATH...
> .....paths are MADE by walking.
>
================================================================================
>
> --__--__--
>
> Message: 2
> Date: Fri, 12 Apr 2002 10:04:26 -0500
> From: "Mike Mattes"
> To:
> Subject: Re: [mems-talk] Capacitive pressure sensor
> Reply-To: mems-talk@memsnet.org
>
> Johan,
>
> I would recommend ISSYS. Phone: (734) 547-9896
>
> Regards,
> Mike Mattes
>
> >>> Johan.Coosemans@esat.kuleuven.ac.be 04/12/02 02:08AM >>>
> Hello all,
>
> I am looking for a capacitive pressure sensor, preferably in die form,
> to be used in biomedical applications. The maximum absolute pressure to
> be measured is 140kPa (1.4 bar). Does anyone know who has this kind of
> sensors commercially available? (I already contacted several firms, but
> they only produce capacitive pressure sensors with a maximum pressure of
> 10 bar, for car manufacturers.)
>
> Thank you very much,
>
> Johan Coosemans
>
>
> --------------------------------------------
> Johan Coosemans
> Phd student
> KULeuven, ESAT-MICAS
> Kasteelpark Arenberg 10
> B-3001 Leuven, Belgium
> tel: +32 (0)16321716 fax: +32 (0)16321975
> mailto:Johan.Coosemans@esat.kuleuven.ac.be
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
> --__--__--
>
> Message: 3
> From: "Rick Williston"
> To:
> Subject: RE: [mems-talk] I Need SOI
> Date: Fri, 12 Apr 2002 09:18:37 -0600
> Reply-To: mems-talk@memsnet.org
>
> I am looking for up to 10 wafers to push through some experiments that are
> currently on hold. I have had many responses from various sources and I now
> have wafers arriving on Monday that should see me through. Thanks to
> everyone that took time to respond.
>
> Rick
>
> -----Original Message-----
> From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
> Behalf Of Vic Kley
> Sent: Thursday, April 11, 2002 12:21 PM
> To: mems-talk@memsnet.org
> Subject: Re: [mems-talk] I Need SOI
>
>
> How many do you need?
>
> Vic
>
> ----- Original Message -----
> From: Rick Williston
> To:
> Sent: Wednesday, April 10, 2002 3:42 PM
> Subject: [mems-talk] I Need SOI
>
>
> > To All
> >
> > Due to unanticipated difficulties in processing, we find ourselves in
> short
> > supply of 4" SOI wafers critical to our MEMS development activities. This
> > is a long-shot, but does anyone have any surplus SOI wafers with 1-2
> micron
> > embedded insulator with 50-100 microns of silicon on top of it? If so,
> send
> > me availability, numbers, pricing, resistivity and name of the
> > manufacturer. You can reply directly to my e-mail at
> > rwilliston@bigbangwidth.com
> > If I could get some wafers to tide me through until our next delivery
> > (preferably this week) it would really save my bacon!
> >
> > Thanks
> > Rick
> > _______________________________________________
> > mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> > Hosted by the MEMS Exchange, providers of MEMS processing services.
> > Visit us at http://www.mems-exchange.org/
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
> --__--__--
>
> Message: 4
> Subject: Re: [mems-talk] Critical point drying.
> To: mems-talk@memsnet.org
> From: "Henry Yang"
> Date: Fri, 12 Apr 2002 09:12:46 -0700
> Reply-To: mems-talk@memsnet.org
>
> How are you rinsing the BOE? Are you sure that you have displaced the BOE
> completely with DI and then Methanol? Seems like you are pretty careful
> with rinsing but that would be my first suspection.
>
> Another guess is that the flushing of Methanol with CO2 is not complete. At
> UCLA we used to flush the chamber about 10-15 times (Roughly 20 minutes)
> continuously. You are only flushing for a total of 6 minutes.
>
> What grade of CO2 are you using? Some grades come with a bit of oil. They
> will cause stiction as well. Try spectroscopy grade CO2.
>
> The haze in the chamber is not that big of a deal assuming that there is
> only CO2 present. They might just be localized inhomogeniety. We used to
> seem them in our Polarion chamber.
>
> Good luck.
>
> Henry Yang
> IBM Almaden Research Center
> 408-927-2319
>
> "Sang Park" @memsnet.org on 04/11/2002 10:27:56 AM
>
> Please respond to mems-talk@memsnet.org
>
> Sent by: mems-talk-admin@memsnet.org
>
>
> To:
> cc:
> Subject: [mems-talk] Critical point drying.
>
>
>
> Hi, all.
> I am using the SPI critical point drying apparatus form PSI supplies
> (division
> of Structure Probe, Inc.) to release comb-finger structures (0.5um wide,
> 0.5
> um thick, and 10um long) on 1 um thick SiO2 on a Si substrate. I usually
> use
> Buffered Oxide Etchant to remove SiO2 under comb-finger structures to be
> released without any atiction problem. After I put my sample in the ample
> boat
> with methanol, I load the boat into the critical point drying apparatus.
> Then
> I flush with CO2 for about 3 minutes and wait for 30 minutes for methanol
> and
> CO2 to be mixed well. And I do flusing agian for 3 minutes and the
> apparatus
> is heated up above 35C with the pressure of more than 1300 psi. After I
> wait
> for 10 minutes or so, I vent the CO2 gas.
> But there is the point I have a problem. While I'm venting the CO2, I
> notice a
> little haze generated and that can be seen by my own eyes.
> After finishing the venting and taking out the sample, I noticed some parts
> are o.k., but some parts, especially the end of suspended structurs, are
> stuck
> to the substrate.
> Please send me any processing tips to solve this problem.
> Thanks.
>
> =================================
> Sang Won Park
> Graduate Research Assistant
> Electrical Engineering
> The University of Texas at Dallas
> Phone) 972 - 883 - 2893
> Fax) 972 - 883 - 6839
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
> --__--__--
>
> Message: 5
> Date: Fri, 12 Apr 2002 09:26:57 -0700 (PDT)
> From: Troy Plattner
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Bonding PC membranes to glass
> Reply-To: mems-talk@memsnet.org
>
> We are currently trying to form a high-yield process
> for bonding polycarbonate membranes to glass samples.
> Our current method consists of mounting them onto PDMS
> with alcohol, etching the surface with oxygen plasma
> and then attempting to transfer them onto the glass
> slides (which are prepared with adhesion promoter) at
> a high temperature.
>
> The main problem is getting the membrane to transfer
> completely, as the PDMS still pulls on the membrane
> when we try to dismount it from the glass. Does
> anyone have any related experience/suggestions?
>
> Thanks,
>
> Troy Plattner
> Yahoo! Tax Center - online filing with TurboTax
> http://taxes.yahoo.com/
>
> --__--__--
>
> Message: 6
> From: kirt_williams@agilent.com
> To: mems-talk@memsnet.org
> Subject: RE: [mems-talk] Capacitive pressure sensor
> Date: Fri, 12 Apr 2002 11:14:16 -0700
> Reply-To: mems-talk@memsnet.org
>
> > I am looking for a capacitive pressure sensor, preferably in die form,
> > to be used in biomedical applications. The maximum absolute
> > pressure to
> > be measured is 140kPa (1.4 bar). Does anyone know who has this kind of
> > sensors commercially available?
>
> NovaSensor make piezoresistive, rather than capacitive, pressure-sensor
> chips,
> in roughtly that absolute pressure range, and sells some of the them in die
> form.
> These are probably easier to use than capacitive pressure sensors.
> See www.novasensor.com for data sheets.
>
> --Kirt Williams Agilent Technologies
>
> --__--__--
>
> Message: 7
> From: Maurice Norcott
> To: "'mems-talk@memsnet.org'"
> Subject: RE: [mems-talk] looking for vendors
> Date: Fri, 12 Apr 2002 11:15:49 -0700
> Reply-To: mems-talk@memsnet.org
>
> I thin you're going to have a hard time with both Cheap SOI
> wafers & conductive epoxy at 400C. Most Epoxys can't survive
> more than 225C for extended periods. Try WWW.epotek.com they
> have the best catalog of HT epoxys. They might have a solution
> for your polymer request.
>
> -----Original Message-----
> From: ABHIJAT GOYAL [mailto:abhijatgoyal@psu.edu]
> Sent: Thursday, April 11, 2002 12:20 PM
> To: mems-talk@memsnet.org
> Subject: [mems-talk] looking for vendors
>
>
> Hi all,
>
> can you please suggest me some vendors for the following materials-
>
> 1) cheap SOI wafers (around 150 bucks per wafer)
> 2) electrical conductive glue which can stand a temperature of 400 C
> 3) polymer that can provide me good electrical insulation but has very good
> thermal conductivity.
>
> I will highly appreciate if someone could suggest me something,
>
> Thanks and any help will be highly appreciated,
>
> Abhijat
>
> Abhijat Goyal
> EE MEMS group,
> MS candidate,
> Dept. Of Electrical Engineering,
> State College, PA
>
> Ph: (R)814-2350917
> (O)814-8653664
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
> --__--__--
>
> Message: 8
> From: Maurice Norcott
> To: "'mems-talk@memsnet.org'"
> Subject: RE: [mems-talk] vacuum oven
> Date: Fri, 12 Apr 2002 11:29:04 -0700
> Reply-To: mems-talk@memsnet.org
>
> Blue-M goes up to 260C , I don't think I've seen any go
> much higher as the seals won't hold.
>
>
>
> -----Original Message-----
> From: anshu mehta [mailto:anshu_mehta@yahoo.com]
> Sent: Thursday, April 11, 2002 2:02 PM
> To: mems-talk@memsnet.org
> Subject: [mems-talk] vacuum oven
>
>
> Hi
>
> We are inetrested in buying a vacuum oven which could
> to a pressure range of few torr or less and can go up
> to temperatures of 400-500C. Also, we want it to have
> a mechanical feedthrough to be able to apply pressure
> . We want to put a device inside, cover it and seal
> using glass frits. the high temperature is required
> for firing of glass frits.
>
> Kindly suggest if such oven would be available
> off-the-shelf or if we could get it custom made from
> somewhere.
>
> Thanks,
> Anshu mehta
> Yahoo! Tax Center - online filing with TurboTax
> http://taxes.yahoo.com/
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
> --__--__--
>
> Message: 9
> Date: Fri, 12 Apr 2002 12:17:55 -0700 (PDT)
> From: anshu mehta
> To: mems-talk@memsnet.org
> Subject: [mems-talk] metal properties
> Reply-To: mems-talk@memsnet.org
>
> Hi
> I am looking for the physical property of an alloy. I
> contacted the suppiers as well as a metallurgy worksop
> for this, even ASTM, but they couldnt provide me with
> the data. I am looking for the thermal expansion of
> coefficient for CRS 1010
> the other specifications are:
> STANDARD SPECIFICATIONS: ASTM A109, AMS 5040, QQS 698
> TYPICAL ANALYSIS: C .13 max Mn .30/.60 P .020 max S
> .025 Max
> TYPICAL HARDNESS: Rockwell B 65 max
> TYPICAL APPLICATIONS: Base plates, brackets,
> stampings, & washers
> AVAILABLE FORMS: Stock size sheets & coils. Material
> may also be Slit, Sheared, Laser Cut, Blanked, Edged,
> Deburred, and/or Reflattened to your specifications.
>
> Please get back to me with any information that you
> might have about this or even if you could suggest
> where I could look for this data, it would be of help.
>
>
> anshu
> Yahoo! Tax Center - online filing with TurboTax
> http://taxes.yahoo.com/
>
> --__--__--
>
> Message: 10
> From: "Sang Park"
> To:
> Cc: " JB Lee" , "Henry Yang"
> Subject: Re: [mems-talk] Critical point drying.
> Date: Fri, 12 Apr 2002 15:22:58 -0500
> Reply-To: mems-talk@memsnet.org
>
> Thank you for responding.
> We dilute 50 ml BOE with 2000 ml DI and pour away mixed BOE and DI until we
> get about 50ml or less. And we do the same dilution more than 5 times. Then
> the sample in less than 50 ml DI water is diluted with 1000 ml of metahnol
> and keep the same dilution mora than 5 times.
> Is this enough? Is there any other way of diplace BOE and DI completely with
> methanol?
> We also use extra dry CO2 not the spectrocsopy CO2.
> We'll try to use the spectrocsopy CO2.
> Please give me more processing tips.
> Thanks.
> =================================
> Sang Won Park
> Graduate Research Assistant
> Electrical Engineering
> The University of Texas at Dallas
> Phone) 972 - 883 - 2893
> Fax) 972 - 883 - 6839
> ----- Original Message -----
> From: "Henry Yang"
> To:
> Sent: Friday, April 12, 2002 11:12 AM
> Subject: Re: [mems-talk] Critical point drying.
>
>
> > How are you rinsing the BOE? Are you sure that you have displaced the BOE
> > completely with DI and then Methanol? Seems like you are pretty careful
> > with rinsing but that would be my first suspection.
> >
> > Another guess is that the flushing of Methanol with CO2 is not complete.
> At
> > UCLA we used to flush the chamber about 10-15 times (Roughly 20 minutes)
> > continuously. You are only flushing for a total of 6 minutes.
> >
> > What grade of CO2 are you using? Some grades come with a bit of oil. They
> > will cause stiction as well. Try spectroscopy grade CO2.
> >
> > The haze in the chamber is not that big of a deal assuming that there is
> > only CO2 present. They might just be localized inhomogeniety. We used to
> > seem them in our Polarion chamber.
> >
> > Good luck.
> >
> > Henry Yang
> > IBM Almaden Research Center
> > 408-927-2319
> >
> > "Sang Park" @memsnet.org on 04/11/2002 10:27:56 AM
> >
> > Please respond to mems-talk@memsnet.org
> >
> > Sent by: mems-talk-admin@memsnet.org
> >
> >
> > To:
> > cc:
> > Subject: [mems-talk] Critical point drying.
> >
> >
> >
> > Hi, all.
> > I am using the SPI critical point drying apparatus form PSI supplies
> > (division
> > of Structure Probe, Inc.) to release comb-finger structures (0.5um wide,
> > 0.5
> > um thick, and 10um long) on 1 um thick SiO2 on a Si substrate. I usually
> > use
> > Buffered Oxide Etchant to remove SiO2 under comb-finger structures to be
> > released without any atiction problem. After I put my sample in the ample
> > boat
> > with methanol, I load the boat into the critical point drying apparatus.
> > Then
> > I flush with CO2 for about 3 minutes and wait for 30 minutes for methanol
> > and
> > CO2 to be mixed well. And I do flusing agian for 3 minutes and the
> > apparatus
> > is heated up above 35C with the pressure of more than 1300 psi. After I
> > wait
> > for 10 minutes or so, I vent the CO2 gas.
> > But there is the point I have a problem. While I'm venting the CO2, I
> > notice a
> > little haze generated and that can be seen by my own eyes.
> > After finishing the venting and taking out the sample, I noticed some
> parts
> > are o.k., but some parts, especially the end of suspended structurs, are
> > stuck
> > to the substrate.
> > Please send me any processing tips to solve this problem.
> > Thanks.
> >
> > =================================
> > Sang Won Park
> > Graduate Research Assistant
> > Electrical Engineering
> > The University of Texas at Dallas
> > Phone) 972 - 883 - 2893
> > Fax) 972 - 883 - 6839
> > _______________________________________________
> > mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> > Hosted by the MEMS Exchange, providers of MEMS processing services.
> > Visit us at http://www.mems-exchange.org/
> > _______________________________________________
> > mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> > Hosted by the MEMS Exchange, providers of MEMS processing services.
> > Visit us at http://www.mems-exchange.org/
>
> --__--__--
>
> Message: 11
> From: "David Nemeth"
> To:
> Subject: RE: [mems-talk] Wet Etching
> Date: Fri, 12 Apr 2002 16:25:49 -0400
> Reply-To: mems-talk@memsnet.org
>
> We've had good luck using TMAH with a masking layer of 1.5 microns of wet
> thermal oxide.
>
> David Nemeth
> Senior Process Engineer
> Sophia Wireless, Inc.
> 14225-C Sullyfield Circle
> Chantilly, VA
> Ph: (703) 961-9573 x206
> Fax:(703) 961-9576
>
> -----Original Message-----
> From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
> Behalf Of Ashutosh Shastry
> Sent: Friday, April 12, 2002 10:57 AM
> To: mems-talk@memsnet.org
> Subject: Re: [mems-talk] Wet Etching
>
>
> Thats right.
>
> And to speed up etching that is to further icrease the <100>/SiO2 etch
> rate ratio, add pyrazine to the EDP. Receipies are available.
>
> Good luck,
>
> -Ashutosh-
>
> On Fri, 12 Apr 2002, Amit Shiwalkar wrote:
>
> Hello,
>
> 500 um is a hugh depth, I dont know what is your feature size. SiO2 will
> not withstand KOH and there are problems even with TMAH. My suggestion is
> that you use Ethylene Diamine + Pyrocatechol mixture, where SiO2 will serve
> as an effective etch mask.
>
> Regards
> Amit Shiwalkar
>
> aslam muhammad wrote:
>
> > Hi Friends
> >
> > I want to use TMAH and KOH as etchant to
> > etch bulk silicon ( 500 micron). which one is more
> > suitable. my etch mask is SiO2. what is the recipe
> > of a good etching rate KOH and TMAH please.
> >
> > Thankx
> >
> > M. Aslam
>
>
>
>
> "Your reality is a figment of my Imagination"
> ......... To me you exist because I imagine that you do.
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
> ============================================================================
> ====
> Ashutosh Shastry Research Associate,
> Graduate Student, Microelectronics Group,
> School of Biosciences and Electrical Engineering Dept.,
> Bioengineering,
> Phone: 091-22-5721791 I.I.T. Bombay, INDIA 400 076.
> Email: shastrys@vsnl.com Phone:091-22-5723655
> ============================================================================
> ===
> O Traveller, there is no such thing as PATH...
> .....paths are MADE by walking.
> ============================================================================
> ====
> _______________________________________________
> mems-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.mems-exchange.org/
>
> --__--__--
>
> Message: 12
> From: "Jennifer Scalf"
> To: mems-talk@memsnet.org
> Date: Fri, 12 Apr 2002 20:10:57 +0000
> Subject: [mems-talk] Commercial DRIE services w/ SOI anti-footing option.
> Reply-To: mems-talk@memsnet.org
>
> I am looking for commercial vendors of DRIE services -- specifically, I am
> looking for vendors whose DRIE machines are outfitted with the SOI
> anti-footing capability (i.e. pulsed platen power).
>
> I know for sure ISSYS and SNF do not have the anti-footing option.
>
> Any leads would be appreciated.
>
> Thank you very much,
> J. Scalf
>
>
> _________________________________________________________________
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>
> --__--__--
>
> Message: 13
> Date: Thu, 11 Apr 2002 11:08:21 -0400
> To: mems-talk@memsnet.org
> From: "Martin O. Patton"
> Subject: [mems-talk] Re: Photoresist coated glass source
> Reply-To: mems-talk@memsnet.org
>
> Towne Ferroxyplate (908) 722-9500 in Somerville NJ makes 4" x 4" x .060"
> glass coated with S1800 resist and iron oxide.
> My 1200 dpi laser printer makes mask transparencies good for large features
> (~0.1 mm). Better printers (more dpi) work better but cost a lot more.
> Good luck,
> Marty
>
>
> --__--__--
>
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>
>
> End of mems-talk Digest
>
>
Anupama V. Govindarajan
Graduate Student
The Pennsylvania State University
Department Of Electrical Engineering
201 EE East #13
University Park, PA 16802
Phone 814-863-3211
email: anupamag@psu.edu