I have had success etching Nb with pure SF6 plasma using a March Jupiter RIE system. The electrode diameter was ~ 6". RF power was 50 watts. Pressure wass 200 mTorr (?). 1.3 microns of hard-baked resist was more than adequate as a mask to etch 4000 Angstroms Nb films. Roger Shile >>> mike.tippetts@pfe-ltd.com 04/18/02 03:34AM >>> Hi all, I have been trying to etch Niobium using CF4 plasma but the process seems more willing to strip the photoresist before it etches into the metal. Does CF4 have problems with selectivity or is there another recipe for this process that could be used. Mike _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/