Hello everyone!
I am trying to etch Silicon with a PMMA mask using a CF4/H2
mixture by RIE (13.56 MHz, DC Bias from 200 to 400 V, various
gas flows and pressures). The problem I have is the selectivity
between Silicon and PMMA (now in the range of 3:1 silicon:PMMA,
vice versa would be more helpful). The etch depth should be about
50 to 100 nm. The thickness of the mask (spincoated) lies between
100 nm and 200 nm.
Has anybody an idea? Thanks a lot



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Dipl.-Chem. Matthias Kruse
Institut fuer Anorganische Chemie
Fachbereich 8
Universitaet Essen
Universitaetsstr. 5-7
45117 Essen

Tel.  +49 (0)201 183-4515
Fax.  +49 (0)201 183-4195
email matthias.kruse@uni-essen.de
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