If you are using a combination of CF4/O2, try to keep the O2 at around
about 5% of total CF4+O2 flow.

Try using a slightly higher pressure, or lower total flow to reduce
species residence time.



If possible, the 'substrate' should be held at 20 Degree C - Resist Etchrate
has been
known to rise during the course of dry etching, if substrate temperature is
too high.

-----Original Message-----
From: Mike Tippetts [mailto:mike.tippetts@pfe-ltd.com]
Sent: 18 April 2002 11:35
To: 'mems-talk@memsnet.org'
Subject: [mems-talk] Niobium dry etching


Hi all,

I have been trying to etch Niobium using CF4 plasma but the process seems
more willing to strip
the photoresist before it etches into the metal. Does CF4 have problems with
selectivity or is there
another recipe for this process that could be used.

Mike
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