durusmail: mems-talk: Re: selective dry etching of Al
Re: selective dry etching of Al
2002-04-19
Re: selective dry etching of Al
Martin.WALKER@oxinst.co.uk
2002-04-19
Hi Arnaud

Unfortunately, your GaAs is likely to be etched significantly by anything
you can use to etch the Al layer.  Al will passivate effectively if you have
any fluorine present, so that should be avoided.  Your best hope is to try
wet etching with something like orthophosphoric acid.  This should remove
the Al at a reasonable rate.  As far as I know, it does not attack GaAs.

Regards, Martin

Martin Walker BSc(Tech) MSc
Tactical Marketing Engineer
Oxford Instruments Plasma Technology
North End, Yatton,
Bristol BS49 4AP  UK
T. +44 (0) 1934 837031
F. +44 (0) 1934 837001
E. 
W. 

 ###  OXFORD INSTRUMENTS   http://www.oxford-instruments.com/  ###

Unless stated above to be non-confidential, this E-mail and any
attachments are private and confidential and are for the addressee
only and may not be used, copied or disclosed save to the addressee.
If you have received this E-mail in error please notify us upon receipt
and delete it from your records. Internet communications are not secure
and Oxford Instruments is not responsible for their abuse by third
parties nor for any alteration or corruption in transmission.

reply