Hi

The chemistry you need for this is CHF3/Ar.  The process is mainly physical,
and can have significant redeposition of material if you don't get the gas
flows etc. right.  You can use either RIE or ICP (depending on your system).
You should be able to achieve 20nm/min with RIE, and faster with ICP.  If
you are using a stack on Pt/Ti, then these can be etched too using an argon
plasma without breaking vacuum.

Martin Walker BSc(Tech) MSc
Tactical Marketing Engineer
Oxford Instruments Plasma Technology
North End, Yatton,
Bristol BS49 4AP  UK
T. +44 (0) 1934 837031
F. +44 (0) 1934 837001
E. 
W. 


>mems-talk@memsnet.org mems-talk@memsnet.org
>Thu, 18 Apr 2002 16:21:57 +0100 (BST)
>
>Dear Fellow MEMS Enthusiasts,
>       Can someone in cyberspace suggest an approach to 'dry etch'
>PZT/PST?
>
>kind regards,
>
>P.W Lau


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