Hi Richard,
I would say it's highly likely that the silicon will be attacked by
RIE. For selectivity, wet-etching is the way to go. See my earlier reply
to Peng Yao.

Jesse Fowler
  UCLA/MAE Dept., 420 Westwood Plaza, Room 37-129, ENGR IV
  Los Angeles, CA 90095-1597 | (310)825-3977
"Battery is safe if not provoked." -- _Batteries in a Portable World_

On Mon, 22 Apr 2002, Haigh, Richard wrote:

> Dear All
>
> I've had some SOI wafers coated with Si3N4 and patterned on one face.
> Unfortunately, the wrong face has been patterned. I don't want to
> dispose of the wafers because of their cost. I've been told that I can
> have the nitride striped off both faces (with RIE), then re-applied and
> patterned on the correct face. What I need to know, does the stripping
> damage the silicon in anyway?
>
>
> Regards
>
>
>
> Richard Haigh
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