durusmail: mems-talk: Aluminium contact
Aluminium contact
2002-04-22
2002-04-23
2002-04-25
2002-04-26
Aluminium contact
Sandra Bermejo
2002-04-25
Dear Ravi,
Thanks for your answer,
I usually make an anneal in H2N2 ambient for 20 minutes. The temperature
ranges from 450:C to 500:C. I wonder if I can raise this temperature avoiding
the diffusion of aluminium trough the wafer.
Best regards,
Sandra

Ravi Shankar ha escrito:

> Hi
> The amount of doping and the proper annealing are a key to make good
> contact. The if the doping of the P-type is less then there is all the
> chance that you may end up with getting a schottkey contact rather than
> ohmic(since Al also acts as a p type impurity in silicon so there will be
> some diode formation). Your doping of around 3e15/cc may not be sufficient
> as it will be better to have more than 1e18/cc to have good contact.
> Also the annealing will not activate the impurity in their proper place in
> silicon lattice, so you may not be able to achieve good contact if proper
> annealing is not performed. what is the annealing done by you?
> Regds
> Ravi Shankar
> Semiconductor Complex Ltd
> India
>
>
> On Mon, 22 Apr 2002, Sandra Bermejo wrote:
>
> > Hi,
> > I would like to know if it is posible to make a good contact of
> > aluminium and a P doped wafer. The doping level is about  3.10+15 cm-3.
> > Maybe a suitable aluminium anealing would work?
> > Thanks in advance,
> > Sandra
> >
> > --
> > *********************************************************
> > Sandra Bermejo Broto
> > Assistant Professor
> > Electronic Engineering Department
> > Semiconductor Devices Group (GDS)
> > UPC-Campus Nord, C5
> > C/Jordi Girona, 1-3
> > E-08034 Barcelona
> > SPAIN
> > Phone: + 34 93 401 68 78
> > Fax:   + 34 93 401 67 56
> > e-mail: sandra@eel.upc.es
> > *********************************************************
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