Are you using the usual 10:90 ratio of Ti to Tungsten?  If so, 30% (full
strength) H2O2 by itself should be sufficient to etch the material, unless
it has been exposed to certain other processes which might passivate the
surface.  The etch rate in full strength CMOS grade H2O2 should be about 100
A/min.

Justin C. Borski
MEMS Program Manager
Advanced MicroSensors Inc.


-----Original Message-----
From: Anke Stock [mailto:stock@microfab.de]
Sent: Thursday, April 25, 2002 3:17 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Wet etching TiW


Hello to everybody,
is there someone who has experience in wet etching of TiW? I use a
mixture of HCl and H2O2, but it seems that there are small amounts of
TiW on the wafer after etching. Has someone experiences with parameters
like temperature, time, other mixtures or something else? Many thanks
for your help
Anke
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