Robert,
I do not have a recipe for such an etch, but expect that it could be done on the
Alcatel 601e we have here since you mention the STS machine being a suitable
platform.
If you have the process information and material we could do some feasability
tests immediately.
Neal Ricks
Haleos, Inc.
540.552.4610x3875



  Robert Okojie  wrote: Folks:

I have an urgent need for DRIE of silicon carbide to augment our capability
here.

Typical features are:
Depth = 300 microns
Minimum feature size : 200 microns
Wafer size : 4 in (to be supplied by NASA)
Etch mask = Electroplated Nickel (will be done at NASA)
Number of wafers = 20
Delivery date = July 15

DRIE etch rate of SiC is typically about 1 micron/min (Plasmatherm or
STS). Given the urgency of this need, only the experienced need to respond.

That said, I will be glad to discuss future collaboration with interested
parties.

Thanks.


Robert S. Okojie, Ph.D.
NASA-Glenn Research Center
Sensors and Electronics Branch
21000 Brookpark Road, M/S 77-1
Cleveland, OH 44135.
Ph: 216/433-6522; Fax: 216/433-8643
e-mail: robert.okojie@grc.nasa.gov
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