Sanghoon,

There are several references showing trench refill
with SiO2 (e.g. Zhang & Najafi MEMS '02 pp:160-163) by
etching a series of thin fins (2 um thick, 1.5 um
spacing)in the DRIE process and then using the volume
expansion during thermal oxidation to completly
oxidize the fins and the two adjacent oxidation fronts
will merge and refill the trench. The trenches are
then overlayed with 1-2 um of PSG glass to protect the
top surface

I am not aware of reports going as deep as 300 um (the
najafi paper only goes 25 um deep) and the layers are
not a high quality oxide as there are several voids
between the fins and stress problems to deal with. If
you need a planar surface on top, you will probably
also have to etch back the oxide or CMP it flat.

Good luck

Jeff


--- Sanghoon Lee  wrote:
> Hi,
>
> I want to fill a deep trench in silicon wafer with
> insulating material after Deep RIE process.
> The depth and width will be around 300 micron and
> 500 micron, respectively.
> Does anybody know which process is available for
> that?
>
> Thank you.
>
> Best regards,
> Sanghoon Lee
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