Dear Fred,

If your design allows, you could use 1000 ohm.cm silicon, Lithium
drift it, which would compensate the carriers, thereby raising the
resistivity to the equivalent of 25kohm.cm at low temperature. It is
a well known technique for producing large depleted volumes in
silicon for nuclear particle detectors.

mateen






> -----Original Message-----
> From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
> Behalf Of Fred Hussain
> Sent: Monday, May 20, 2002 6:47 AM
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Highest resistivity silicon?
>
>
> Dear all,
>
> I am looking for silicon substrates which can be machined using conventional
> MEMS type processes, but at the same time are highly insulating. I've found
> a web page with silicon of 250Kohm-cm resistivity -
> http://www.tydex.ru/materials/materials2/Si.html.
>
> Does anybody:
> have any experience of working with such materials?
> know of any issues, for example the stability of the resistivity with
> temperature?
> micromachined it without any major issues?
> know of any suppliers?
>
> Thanking you in advance.
>
> Regards,
>
> Fred.
>
> --------------------------------------------
> Dr Fred Hussain
> The Technology Partnership plc
> Melbourn Science Park
> Cambridge Road
> Melbourn
> Royston
> Hertfordshire
> SG8 6EE
>
> Tel: 01763 262626
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