Shahram,
        You are probably right about not adding CF4 or SF6 it depends upon the
thickness of the nitride member.  The F addition will eat any silicon compound
just not very fast.   Your possible problem is removing material under a
membrane.  Any gaseous removal mechanism is generally line of sight and can
not penetrate to effectively below a shelf or overhang.  We developed a system
a number of years ago where the plasma gas is given a horizontal swirling
motion to help penetrate under overhanging material.  You can etch Polymide
with straight Oxygen plasma.  One of our customers is etching 8 microns of
Polymide in a straight Oxygen plasma in less than 5 minutes. If you want to
test this let me know.  Bill Moffat

-----Original Message-----
From: Shahram Malek [mailto:smalek@samcointl.com]
Sent: Wednesday, June 05, 2002 9:07 AM
To: mems-talk@memsnet.org
Subject: Re: [mems-talk] Polyimide residue removal


Hi Martin,

You can use a UV-Ozone Cleaning process to remove the remaining 100-500 nm
of polyimide. Please visit our Web site at
http://www.samcointl.com/prod/UVO.html for our line of UV-Ozone Cleaners
and contact me if you have any questions or would like to receive
additional information. I look forward to helping you with your
application.

Shahram



Martin HEDSTROM wrote:

> Hi all,
>
> I have a problem with removal of polyimide residues under a nitride
> membrane. The polyimide is removed in a pure O2-plasma since I am afraid
> that any CF4 addition might hurt the nitride membrane. Apparently this
> O2-plasma is not sufficient since I get small residues left with about
> 100-500 nm thickness.
>
> Does anybody know about any dry etchant which can remove the last of the
> polyimide without damaging the nitride membrane?
>
> Thanks in advance
>
> /Martin
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