> If your problem is related to erosion (mechanical) and less on corrosion > (electrochemical) yes, during the RIE process the Aluminum mask is being sputtered away. Primarily mechanical erosion due to ion bombardment. > very good..... So the rule would be to consider your process and try to do > everything you can do to keep the temperature down We can cool the target electrode to some extent (it is water cooled, and currently maintains room temp, but I think we could bring it close to 5-100C, I'd have to double check the system to see if there's a lower limit. I'd also rather not get to close to freezing the system. Facilities manager wouldn't appreciate that too much :) Anyway, would a 200C delta-T make that much of a difference in the sputter threshold of the material? I'm also concerned about how the drop in temp will affect the etch rate of the SiO2. I seem to recall that polymer formation (etching with CHF3/O2) shows a strong temp dependence when increasing temp, don't remember what happens if cooling increases polymer formation/strength, or if the effect tapers off below room temp. > The second consideration for a strength increase is to alloy it... We get the wafer from a foundry (through the MOSIS service) including the aluminum. I'm now looking into the exact aluminum composition, but it isn't something I have control over. Anyway, I guess I'm still primaily focusing on finding a way to controllably oxidize just a thin portion of the mask (i.e., more than the native thickness (~2-3nm) but not more than 200-300nm). Either thermal or plasma oxidation seems to be the way to go, but I don't have any good numbers to start with (i.e., temp/time for oxidation), and I'd rather avoid just picking some parameters at random. Someone else did mention that instead of oxide, possibly I could nitride the aluminum instead. Starting to look into this now. Seems like a nitrogen plasma environment with the right parameters could do it, and AlN is supposedly some pretty tough stuff. With both oxidation and ?nitridation? I need to make sure that I don't convert the entire mask, as it needs to be present as Al after the etch process. Hi ho hi ho.... Nick Jankowski