Dear All,

I wonder if someone has a solution to my problem..

I have a Ge substrate on which 200 nm SiO2 and top of that 200 nm SIN film was
deposited ( PECVD). After annealing at high temperatures,  HF etch does not
get rid of the deposited nitride layer though it does uniformly before
annealing. I have tried etching for more than 15 min in HF (48 %).

Any suggestion. Please send email directly at suresh@soton.ac.uk

Regards,
suresh