Hi,

Clarification on a the previous question:

We need to fill 0.5um wide 8-10 um deep trenches in SOI with dielectric
polysilicon with a varying within 2.5-3.5 index of refraction.

Can it be done by e.g. doping the polysilicon with oxygen, nitrogen, etc?

If so, what are the relationships between doping level and refraction index?

Thanx,
David


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