I'm not sure if this is totally helpful, but HF will attack Ti. If your Pt
is that thin, it may not protect the Ti from the HF. Have you considered
using Cr as an adhesion layer instead?

Jesse Fowler
  UCLA/MAE Dept., 420 Westwood Plaza, Room 37-129, ENGR IV
  Los Angeles, CA 90095-1597 | (310)825-3977
"We did our best but God didn't want to give us any goals."
 -- Saudi Arabian goalkeeper Mohammed Al-Deayea (World Cup 2002)

On Tue, 2 Jul 2002, Haigh, Richard wrote:

> Dear all,
>
> I am fabricating a device with Si/Ti(8 nm) /Pt (100 nm) /PZT (10 um),
> when the PZT is etched with HF:HCL the Pt is observed to peel from the
> Substrate. Analysis has indicated the formation of a lead silicate glass
> layer at the point of peeling. I have tried to increase Pt (300 nm)
> thickness to reduce the diffusion of lead to the Si, unfortunately Pt is
> a porous metal. In addition I have tried to deposited TiO2 (300 nm by
> sputtering) between the Ti and Si. Neither of these approaches seems to
> have worked in eliminating lead diffusion or glass formation.
>
> Does anyone know of an alternative layer that I can deposit that might
> stop the diffusion of lead?
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