Depending on your feature size you might try lift-off by using a sonicating
water bath.  It may also help to skip the adhesion promoter for the
photoresist.  I've tried this with a very large features and it seemed to
work well enough.

Luke Hunter

-----Original Message-----
From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
Behalf Of imuram@mb1.tdk.co.jp
Sent: Tuesday, July 09, 2002 12:17 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] SiO2 patterning


Dear all,

We are struggling with patterning SiO2 on ZnO thin film.
I would like to make an SiO2 pattern without damaging ZnO.
Thicknesses of SiO2 and ZnO are 250 and 800 nm, respectively.

Lift-off seems to be difficult because it is hard to
get rid of photo resist after sputtering SiO2.
We haven't tried, but wet or dry etching might be possible.

Could anyone give us some advice, please?

Thank you in advance.

Masa Imura
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