Dear HeeTake Yi,

You may find sentences about GaAs etch anisotropy in the following
references and in their references and also in their references ... :),

http://tima-cmp.imag.fr/tima/mcs/doc/total.pdf

Hjort K., "Sacrificial etching of III-V compounds for micromechanical
devices", J. Micromech. Microeng. 6(1996), 370-375

Oray Orkun Cellek
o.o.cellek@ieee.org
Middle East Technical University
Electrical & Electronics Engineering Department
06531
Ankara, Turkey


>From: HeeTaek Yi 
>Reply-To: mems-talk@memsnet.org
>To: mems-talk@memsnet.org
>Subject: [mems-talk] anisotrophic wet etchant for GaAs
>Date: Tue, 23 Jul 2002 11:42:27 -0700 (PDT)
>
>Help me...
>
>     would you give me a information?
>
>      Actually I want to etch about 150 um etching only
>by wet ething the anisotrophy rate less than 0.1(150um
>: 15um).
>
>                     From taeggy
>Yahoo! Health - Feel better, live better
>http://health.yahoo.com
>_______________________________________________
>MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
>options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing services.
>Visit us at http://www.memsnet.org/




Oray Orkun Cellek
Research Assistant
Middle East Technical University
Electrical & Electronics Engineering Department
06531 Ankara Turkey
Tel : +90 312 210 4579
Fax : +90 312 210 1261


_________________________________________________________________
Join the worlds largest e-mail service with MSN Hotmail.
http://www.hotmail.com