durusmail: mems-talk: Aluminum etch problem
Aluminum etch problem
2002-07-24
2002-07-24
Aluminum etch problem
Bill Moffat
2002-07-24
Robert,
       I am in the middle of a trade show at the moment, Semicon West.  I will
be back in the office tomorrow and I will send you details of an image
reversal lift off process that is really easy.  Supreme resolution, the best I
have seen is 800 Angstroms lines and spaces.  As luck would have it I met a
Cornell University guy at the show who swears by Image Reversal and will
happily discuss it with all the process parameters for fine resolution and
very large features.  Will send more details tomorrow.  Bill Moffat

-----Original Message-----
From: Robert Dean [mailto:rdean@Eng.Auburn.EDU]
Sent: Tuesday, July 23, 2002 3:20 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Aluminum etch problem


>Hello,

I have a fab process where I need to pattern a thin aluminum layer that has
been deposited on copper.  Unfortunately, the aluminum etch I have is PAE,
which also etches copper.  Any suggestions other than Cl2 RIE?  The
aluminum layer is used as a mask for a later processing step and could be
changed to another metal.

Sincerely,

Robert Dean

Research Associate IV
Center for Advanced Vehicle Electronics
Auburn University
200 Broun Hall
Auburn, AL 36849

Voice: 334-844-1838
Fax:   334-844-1898
Email: rdean@eng.auburn.edu
Web: http://www.eng.auburn.edu/~rdean/index.htm
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