Hello Frank,
Is the reason for specifying CVD that through-hole profile very vertical,
causing step coverage difficulties, in addition to the temperature constraints
upon the insulator?
If the holes are tapered, you may be interested in metallizing using a PVD
technique (Al or Cu only).  The substrate temperature should stay low enough not
to degrade the Paralene, provided the required thickness is not too great.  I
believe I have evaporated more than a micron of Aluminum while temperature tape
placed upon the back of a 0.5mm thick wafer indicated that it did not exceed
70C.
I would be happy to provide this service if you think PVD will work.
regards,
Neal Ricks
Haleos, Inc.  540.552.4610x3875

 Frank Rasmussen wrote:Dear colleagues,

I am searching for a facility (foundry, university lab, etc.) capable of
depositing metals by means of chemical vapor deposition (CVD). A metal like Al,
Cu or W is preferred.

If the given process is a LPCVD, PECVD or any other kind of CVD process is not
important. However, the process temperature is important. The maximum allowable
process temperature is 300 degrees centigrade (572 degrees Fahrenheit), but a
temperature below 300 degrees centrigrade is preferred.

My application is metallization of wafer through-holes, which are insulated by
Parylene C.

Any input is greatly appreciated.

Thanks,
Frank

------------------------
Frank Engel Rasmussen
Industrial Ph.D. student, MEMS research group
Mikroelektronik Centret
Oersteds Plads
Building 345 (east), DTU
DK-2800 Kgs. Lyngby
Denmark
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