Here is a previous email that has the information you want.

Phil

Our group at the Hughes Aircraft Technology Center performed some
collaboratory work with UC Davis back in the early 90's. Here are a couple
of references.

R. W. Bower, M. S. Ismail and B. E. Roberds, 'Low Temperature Si3N4 Direct
Bonding'. Published in Appl. Phys. Lett., 28 June 1993 pp. 2485-3487.

R. W. Bower, M. S. Ismail, B. E. Roberds and S. N. Farrens, 'One-Step Direct
Bonding Process of Low Temperature Si3N4 and TiN Technology'. Conference on
Solid-State Sensors and Actuators (Transducers 93), Yokohama, Japan. June
(1993). Published in the Journal of Transducers 93 June (1993).

Regards,

Mike Barger
Klesis Corporation
+1 215 527 0313

-----Original Message-----
From: Tulip [mailto:tulipc@pagic.net]
Sent: Tuesday, August 20, 2002 1:44 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Bonding with Nitride


Hello, everyone,

Does anyone have some experience doing Si-Si bonding with LPCVD nitride
& anneal process?
Normally we know we can do the fusion bonding by oxide layer, but how
about nitride?
If we want to do this process, can we do the LPCVD nitride on both
wafers?
Please tell me where to fine the reference.

Thanks for your great help,

Tulip
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