Was the SiNx deposited by PECVD?
If so it likely contained a lot of hydrogen which would outgas during the
oxidation and create bubbles under the metal.  A solution might be to outgas
the hydrogen at 600 C or higher prior to depositing the metal.

Roger Shile

-----Original Message-----
From: Haigh, Richard [mailto:R.D.HAIGH@cranfield.ac.uk]
Sent: Wednesday, August 21, 2002 9:06 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Ti O2 on SiNx


I have deposited Ti (80 nm) onto SiNx (200 nm) on Si. The Ti was then
oxidised at 600 C. Bubbles have formed on the surface of the TiO2
following oxidation. Has anyone experienced a similar effect?

Regards


Richard Haigh
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