Pure GaAs and AlGaAs with Al content<35-40% are not attacted by HF... You
have to be concerned about HF only if you have a multilayered AlGaAs
sructure (e.g. laser) with high-Al layers..

Mike


> -----Original Message-----
> From: Peter & Judy Wright [SMTP:pvjk@qwest.net]
> Sent: Wednesday, August 28, 2002 11:53 PM
> To:   mems-talk@memsnet.org
> Subject:      RE: [mems-talk] Tantalum nitride etch
>
> Neal,
> Our wafers are GaAs so we have to avoid the use of HF.
>
> Peter Wright
>
> -----Original Message-----
> From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On
> Behalf Of Neal Ricks
> Sent: Tuesday, August 27, 2002 1:19 PM
> To: mems-talk@memsnet.org
> Subject: Re: [mems-talk] Tantalum nitride etch
>
> Have you tried the published Tantalum etches, or do you have to avoid use
> of
> HF?
>
>
>  Peter & Judy Wright
> wrote:Does anyone know of a wet etch for tantalum nitride? We are using it
> for an
> underbump metalization at a subcontractor who does not have a dry etch
> capability.
>
> Peter Wright
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