Hello Martin,

A good reference is "Fabrication Process and Plasticity of Gold-Gold
Thermocompression Bonds" by Christine H. Tsau, Martin A. Schmidt, and S.
Mark Spearing of MIT, in Sixth International Symposium on Semiconductor
Wafer Bonding: Science, Technology and Applications, ECS Proc., 2001.

This paper describes the Au-Au wafer bond parameters:
 Temp = 300 C
 Pressure = 0.5 MPa

I have used these parameters (and also higher temperatures and greater
pressure) with good results. Also, good pressure and temperature uniformity
over the entire area is key to a good bond. Check out www.evgroup.com for
info on bonding equipment.

Best Regards,
Josh Palensky
EV Group
602-437-9492


-----Original Message-----
From:   Martin HEDSTROM [mailto:martin.hedstrom@memscap.com]
Sent:   Monday, September 09, 2002 8:37 AM
To:     mems-talk@memsnet.org
Subject:        [mems-talk] Wafer level Au-Au thermocompression bonding

Hi All,

I'm interested to know if there is anybody having information about wafer
level Au-Au thermocompression bonding i.e. bonding of e.g. two silicon
wafers with an Au interface. It seems to be quite widely used for flip-chip
bonding of single chips but for wafer level bonding it seems hard to find
any information.
Is there anybody having experience in this that can tell me some approximate
parameters for the process e.g. needed teperature and pressure on the bond
chuck etc. I would also appreciate any references about this.
Thanks in advance,

/Martin

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