Martin,
ICSensor used this bond method for accelerometers in the early 90's. I do not
know whether they still use the method.I did some work with this bond method
around that same time. I used 3000 A Cr and 5000 A gold on both wafers. I
aligned and annealed the wafers at less than 450 C ( I don't remember the exact
number). I used some glass plates for weight. The modern wafer bonders have
plenty of pressure capability. I found that cleaning the surface was very
important. I believe that MIT used this bond method for some of their work in
the mid 90's.



"Hi All,

I'm interested to know if there is anybody having information about
wafer level Au-Au thermocompression bonding i.e. bonding of e.g. two
silicon wafers with an Au interface. It seems to be quite widely used
for flip-chip bonding of single chips but for wafer level bonding it
seems hard to find any information.

Is there anybody having experience in this that can tell me some
approximate parameters for the process e.g. needed teperature and
pressure on the bond chuck etc. I would also appreciate any references
about this.

Thanks in advance,

/Martin"